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Semiconductor Fabrication Materials

Lithography

Lithography is the defining technology for advanced semiconductor manufacture, and critical lithographic performance is largely dependant upon the quality of the polymers in the chosen photoresist. Our electronic grade polymers are produced under stringently controlled conditions and are thoroughly tested to ensure the highest performance available for critical applications. Each product is typically tested for 12 metals, polydispersity, molecular weight, and transparency. Each process is controlled through statistical monitoring so that batch to batch variation is held to a minimum.

Our materials for lithography include:
Polyimide films for stress buffers Polymers for photoresist Polyimides as an interlayer dielectric Planarization and gap fill materials

 

Stress Buffers
Stress Buffer Passivation Layers Polyimide films are frequently used as a "stress buffer" or protective overcoat for semiconductors. Polyimide stress buffers are typically 4-6 microns in thickness, and protect the delicate thin films of metal and oxides on the chip surface from damage during handling and from induced stress after encapsulation in plastic molding compound.
PI-2525, PI-2555, PI-2556 dry etch
PI-2545, PI-5878G wet etch
HD-4000 Series photodefinable, solvent develop, high Tg, fine line

 

Polymers for Photoresist
PHS based polymers for 248 nm photoresist From a captive raw material base, we began producing poly(hydroxystyrene) based polymers in the early 1980’s. Since this time, we have developed a deep understanding of polymer assembly and architecture. Our polymers meet the needs of customers from thick film applications to fine line (<100 nm), critical layer applications.
Polymers for 193 nm photoresist Targeting the 65nm node and below, polymers prepared with High Compositional Uniformity (HCU™) and Reversible Addition Fragmentation Chain Transfer (RAFT1) result is a resist polymer with qualities that lead the industry to shrinking geometries.

 

Interlayer Dielectric Polyimides serve as an interlayer dielectric in both semiconductors and thin film multichip modules (MCM-D's). The low dielectric constant, low stress, high modulus, and inherent ductility of polyimide films make them well suited for these multiple layer applications.

PI-2600 series dry etch Polyimides for extrusion coating requires no adhesion promoter.

 

Planarization and Gap Fill Semiconductor wafers are produced by stacking alternating conductive and dielectric layers on the silicon wafer. The circuit patterns, contacts and vias can create severe topography problems for subsequent layers. A planarization and gap filling layer smooths out the surface undulations for the next layer.

PI-2562 high planarity gap fill, dry etch